The online Technology CAD (TCAD) laboratory has currently 10 simulation experiments on various devices (diode, bipolar and MOSFET) characteristics and are used to extract SPICE parameters for circuit simulation (see Experiment list).

Process simulation is used for semiconductor technology development and process recipe design. It may be used to get also the device structure necessary for device simulation. In process simulation experiment, we shall use SUPREM II tool.

Device simulation is used to model electrical behavior of semiconductor devices largely for technology characterization. In the TCAD laboratory the students will use device simulation as pseudo-experiments (instead of testing devices in the laboratory) and shall be able to examine the internal physics of the devices. Students will also be able to perform "experiments" on devices in much the same way that they would experiment with real devices in a laboratory. In device simulation experiment, we shall use BIPOLE tool.

STEP 1. To obtain the device (diode, bipolar or MOSFET) characteristics, we shall use HP 4145B or Agilent 4156C DC parameter analyzer to measure the different characteristics. The measuring equipment detail is available here.

STEP 2. The device connection is shown for a bipolar transistor in 4145B.

STEP 3. For measurement we need to bias the device properly. This is done by setting the channel Definitions.

STEP 4. Once the device measurement conditions are set, we proceed to measure the desired device characteristics.

STEP 5. Once the measurements are over, the data set need to be saved in a particular format so that they can be used for analyses purposes. See Data File format (see page 5).

As the Technology CAD Laboratory is a simulation laboratory, we start with the available measured device characteristics data.