STEP 1. To obtain the device (diode, bipolar or MOSFET) characteristics, we shall use HP 4145B or Agilent 4156C DC parameter analyzer to measure the different characteristics. The measuring equipment detail is available here.

STEP 2. The device connection is shown for a bipolar transistor in 4145B.

STEP 3. For measurement we need to bias the device properly. This is done by setting the channel Definitions.

STEP 4. Once the device measurement conditions are set, we proceed to measure the desired device characteristics.

STEP 5. Once the measurements are over, the data set need to be saved in a particular format so that they can be used for analyses purposes. See Data File format (see page 5).

As the Technology CAD Laboratory is a simulation laboratory, we start with the available measured device characteristics data. For each experiment, the measured data set is available.